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1

Effects of gamma-ray irradiation on polycrystalline silicon thin-film transistors

N.A. Hastas, C.A. Dimitriadis, J. Brini, G. Kamarinos, V.K. Gueorguiev, S. Kaschieva

Journal:

Microelectronics Reliability

Année:

2003

Langue:

english

Fichier:

PDF, 132 KB

english, 2003

2

Influence of a postoxidation cooling on the interface state density of MOS structures

Journal:

Solid-State Electronics

Année:

1995

Langue:

english

Fichier:

PDF, 195 KB

english, 1995

3

Oxidation of a-Si:H (SiSiO2 interface properties)

P Danesh, A Szekeres, S Kaschieva

Journal:

Solid-State Electronics

Année:

1995

Langue:

english

Fichier:

PDF, 417 KB

english, 1995

4

Multimode — A powerful code for frequency spectrum computation of electromagnetic fields in axially symmetric cavities and longitudinally homogeneous waveguides of arbitrary shape

A.I. Fedoseyev, V.V. Gusev, M.S. Kaschiev, V.A. Kaschieva, V.V. Paramonov

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Année:

1984

Langue:

english

Fichier:

PDF, 508 KB

english, 1984

5

Influence of MeV electron irradiation on the properties of by ion implantation hydrogenated polysilicon TFTs

P.V. Aleksandrova, V.K. Gueorguiev, Tz.E. Ivanov, S. Kaschieva

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2006

Langue:

english

Fichier:

PDF, 129 KB

english, 2006

6

Characteristics of the electron-emission defects introduced in Si–SiO2 structures by MeV electron irradiation

A.F. Zatsepin, S. Kaschieva, S.N. Dmitriev, E.A. Buntov

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2008

Langue:

english

Fichier:

PDF, 216 KB

english, 2008

7

Radiation defects induced by 20 MeV electrons in MOS structures

S. Kaschieva, Zh. Todorova, S.N. Dmitriev

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 177 KB

english, 2004

8

Radiation defects in n- and p-Si MOS structures caused by consecutive ion implantation and gamma irradiation

S. Kaschieva, Zh. Todorova

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 179 KB

english, 2004

9

Effect of postoxidation cooling on the interface states introduced by ion implantation

Journal:

Solid-State Electronics

Année:

1997

Langue:

english

Fichier:

PDF, 245 KB

english, 1997

10

Use of X-ray irradiation for annealing of radiation defects introduced by ion implantation in Si–SiO2 structures

S Kaschieva, I Yourukov

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 144 KB

english, 1998

11

Influence of the ambient on radiation-induced effects during high-energy electron irradiation of MOS structures

S. Kaschieva, S.N. Dmitriev

Journal:

Année:

2002

Langue:

english

Fichier:

PDF, 90 KB

english, 2002

12

Electron irradiation of a-Si:H films prepared from hydrogen-diluted silane

P Danesh, B Pantchev, I Savatinova, E Liarokapis, S Kaschieva, A.G Belov

Journal:

Année:

2002

Langue:

english

Fichier:

PDF, 100 KB

english, 2002

13

Sensitivity of hydrogen plasma-treated SiO2/Si structures to high-energy electron irradiation

S Alexandrova, S Kaschieva, E Halova, E Valcheva, A Szekeres

Journal:

Année:

2002

Langue:

english

Fichier:

PDF, 95 KB

english, 2002

14

Electrical characterization of defects induced by 12 MeV electrons in p—type Si-SiO2 structures

KG Stefanov, S Kaschieva, D Karpuzov

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 213 KB

english, 1998

15

Effect of low dose γ-radiation on the annealing temperature of radiation defects in ion implanted MOS structures

S Kaschieva, S Alexandrova

Journal:

Materials Science and Engineering: B

Année:

2002

Langue:

english

Fichier:

PDF, 187 KB

english, 2002

16

An advantage of MOS structures with ultra thin oxide during irradiation

Journal:

Materials Science and Engineering: B

Année:

2003

Langue:

english

Fichier:

PDF, 174 KB

english, 2003

17

Investigation of p-Type MOS Structure Irradiated with 23 MeV Electrons

Sonia Kaschieva, Elena Halova, Emilia Vlaikova, Sashka Alexandrova, Evgenia Valcheva, Sergey Dmitriev

Journal:

Plasma Processes and Polymers

Année:

2006

Langue:

english

Fichier:

PDF, 132 KB

english, 2006

18

RBS Investigation of Ion Implanted SiSiO2 Structures Irradiated with 20 MeV Electrons

Sonia B. Kaschieva, Christo V. Angelov, Sergey N. Dmitriev, Gichka I. Tsutsumanova

Journal:

Plasma Processes and Polymers

Année:

2006

Langue:

english

Fichier:

PDF, 97 KB

english, 2006

19

Soft X-ray emission spectroscopy of low-dimensional SiO2/Si interfaces after Si+ ion implantation and ion beam mixing

D. A. Zatsepin, S. Kaschieva, M. Zier, B. Schmidt, H.-J. Fitting

Journal:

physica status solidi (a)

Année:

2010

Langue:

english

Fichier:

PDF, 380 KB

english, 2010

20

The Influence of Defect Surface Layers on the Capacitive Properties of MOS Structures

R. N. Litovskii, V. S. Lysenko, A. N. Nazarov, T. E. Rudenko, S. B. Kaschieva, N. R. Nedev

Journal:

physica status solidi (a)

Année:

1983

Langue:

english

Fichier:

PDF, 519 KB

english, 1983

21

Influence of backside implantation on the impurity concentration in the Si-SiO2 system

Journal:

physica status solidi (a)

Année:

1991

Langue:

english

Fichier:

PDF, 135 KB

english, 1991

22

Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation

S. Kaschieva, L. Rebohle, W. Skorupa

Journal:

Applied Physics A: Materials Science & Processing

Année:

2003

Langue:

english

Fichier:

PDF, 206 KB

english, 2003

23

Reduction of the annealing temperature of radiation-induced defects in ion-implanted MOS structures

S. Kaschieva, S.N. Dmitriev, W. Skorupa

Journal:

Applied Physics A: Materials Science & Processing

Année:

2004

Langue:

english

Fichier:

PDF, 167 KB

english, 2004

24

Radiation defects introduced by MeV electrons in argon implanted MOS structures

S. Kaschieva, S. N. Dmitriev

Journal:

Applied Physics A: Materials Science & Processing

Année:

2009

Langue:

english

Fichier:

PDF, 251 KB

english, 2009

25

Electron irradiation of ion-implanted n-type Si-SiO2 structures studied by deep-level transient spectroscopy

S. Kaschieva, K.G. Stefanov, D. Karpuzov

Journal:

Applied Physics A: Materials Science & Processing

Année:

1998

Langue:

english

Fichier:

PDF, 81 KB

english, 1998

26

On the interaction of hydrogen RF plasma with implantation-induced defects in MOS structures

P. Danesh, S. Kaschieva, A. Djakov

Journal:

Solid-State Electronics

Année:

1985

Langue:

english

Fichier:

PDF, 434 KB

english, 1985

27

Formation of the buffer layer of silicon suboxides SiOxin the Si/SiO2low-dimensional heterosystem after Si+ion implantation: SiL2, 3X-ray emission spectra

D. A. Zatsepin, E. A. Panin, S. Kaschieva, H. -J. Fitting, S. N. Shamin

Journal:

Physics of the Solid State

Année:

2009

Langue:

english

Fichier:

PDF, 193 KB

english, 2009

28

Formation and electron-beam annealing of implantation defects in a thin-film Si-SiO2heterostructure

A. F. Zatsepin, S. Kaschieva, D. Yu. Biryukov, S. N. Dmitriev, E. A. Buntov

Journal:

Technical Physics

Année:

2009

Langue:

english

Fichier:

PDF, 234 KB

english, 2009

29

Influence of high energy electron irradiation on the characteristics of polysilicon thin film transistors

P. V. Aleksandrova, V. K. Gueorguiev, Tz. E. Ivanov, S. Kaschieva

Journal:

The European Physical Journal B / Condensed Matter and Complex Systems

Année:

2006

Langue:

english

Fichier:

PDF, 267 KB

english, 2006

30

Phase diagram of the TeO2GeO2 system

Y. Dimitriev, E. Kaschieva, E. Gurov

Journal:

Materials Research Bulletin

Année:

1976

Langue:

english

Fichier:

PDF, 1008 KB

english, 1976

31

Reduction of the radiation sensitivity of MOS structures by irradiation-anneal cycle treatment

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1993

Langue:

english

Fichier:

PDF, 301 KB

english, 1993

32

Influence of high energy electron irradiation on the interface states of the Si-SiO2 system

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1994

Langue:

english

Fichier:

PDF, 282 KB

english, 1994

33

X-ray irradiation of ion-implanted MOS capacitors

S Kaschieva, I Yourukov

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2000

Langue:

english

Fichier:

PDF, 95 KB

english, 2000

34

High energy electron irradiation of ion implanted MOS structures with different oxide thickness

S. Kaschieva, S. Alexandrova

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2001

Langue:

english

Fichier:

PDF, 116 KB

english, 2001

35

Electron and γ-irradiation of ion implanted MOS structures with different oxide thickness

S. Kaschieva, S.N. Dmitriev, Ch. Angelov

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2003

Langue:

english

Fichier:

PDF, 170 KB

english, 2003

36

Annealing of radiation defects in helium-implanted SiSiO2 structures

S. Kaschieva, P. Danesh

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1997

Langue:

english

Fichier:

PDF, 303 KB

english, 1997

37

Influence of γ radiation on the surface states and hole mobility at the Si-SiO2 interface

J. Kassabov, N. Velchev, S. Kaschieva

Journal:

Surface Science

Année:

1970

Langue:

english

Fichier:

PDF, 277 KB

english, 1970

38

Formation of Si nanocrystals in ion implanted Si-SiO 2 structures by MeV electron irradiation

Kaschieva, S, Gushterov, A, Angelov, Ch, Dmitriev, S N

Journal:

Journal of Physics Conference Series

Année:

2012

Langue:

english

Fichier:

PDF, 1.30 MB

english, 2012

39

Effect of MeV electron irradiation on Si-SiO 2 structures

Kaschieva, S, Gushterov, A, Angelov, Ch, Dmitriev, S N

Journal:

Journal of Physics Conference Series

Année:

2014

Langue:

english

Fichier:

PDF, 784 KB

english, 2014

40

Hydrogen passivation of the implantation defects in MOS structures

Danesh, P., Kaschieva, S. B.

Journal:

Radiation Effects

Année:

1984

Langue:

english

Fichier:

PDF, 324 KB

english, 1984

41

Influence of Ro radiation upon ion-implanted MOS structures

Kaschieva, S., Djakov, A.

Journal:

Radiation Effects

Année:

1985

Langue:

english

Fichier:

PDF, 267 KB

english, 1985

42

Effect of UV radiation on ion-implanted Si-SiO2 structures

Kaschieva, S., Nedev, N., Danesh, P., Djakov, A.

Journal:

Radiation Effects

Année:

1984

Langue:

english

Fichier:

PDF, 200 KB

english, 1984

43

Improving the radiation hardness of MOS structures

Journal:

International Journal of Electronics

Année:

1994

Langue:

english

Fichier:

PDF, 105 KB

english, 1994

44

Benchmark Kantorovich calculations for three particles on a line

O. Chuluunbaatar, A. A. Gusev, M. S. Kaschiev, V. A. Kaschieva, A. Amaya-tapia, S. Y. Larsen, S. I. Vinitsky

Année:

2006

Langue:

english

Fichier:

PDF, 443 KB

english, 2006

45

The influence of high-energy electron irradiation and boron implantation on the oxide thickness in the /Si system

Kurmaev, E Z, Shamin, S N, Galakhov, V R, Makhnev, A A, Kirillova, M M, Kurennykh, T E, Vykhodets, V B, Kaschieva, S

Journal:

Journal of Physics Condensed Matter

Année:

1997

Langue:

english

Fichier:

PDF, 217 KB

english, 1997

46

Si nanoclusters generated in Si-SiO 2 structures implanted with different doses of Si ions

Kaschieva, S, Gushterov, A, Gushterova, P, Dmitriev, S N

Journal:

Journal of Physics Conference Series

Année:

2010

Langue:

english

Fichier:

PDF, 941 KB

english, 2010

47

Interface trap generation in MOS structures by high-energy electron irradiation

Halova, E, Alexandrova, S, Kaschieva, S, Dmitriev, S N

Journal:

Journal of Physics Conference Series

Année:

2010

Langue:

english

Fichier:

PDF, 689 KB

english, 2010

48

Spectroscopic studies of SiO x films irradiated with high energy electrons

Dzhurkov, V, Nesheva, D, Scepanovic, M, Nedev, N, Kaschieva, S, Dmitriev, S N, Popovic, Z

Journal:

Journal of Physics Conference Series

Année:

2014

Langue:

english

Fichier:

PDF, 1.25 MB

english, 2014

49

High energy electron-beam irradiation effects in Si-SiO x structures

Nesheva, D, Dzhurkov, V, Šćepanović, M, Bineva, I, Manolov, E, Kaschieva, S, Nedev, N, Dmitriev, S N, Popović, Z V

Journal:

Journal of Physics Conference Series

Année:

2016

Langue:

english

Fichier:

PDF, 923 KB

english, 2016

50

MeV electron irradiation of Si-SiO 2 structures with magnetron sputtered oxide

Kaschieva, S, Angelov, Ch, Dmitriev, S N

Journal:

Journal of Physics Conference Series

Année:

2016

Langue:

english

Fichier:

PDF, 1.17 MB

english, 2016